S595T-GS08 Vishay, S595T-GS08 Datasheet - Page 4

• Manufacturer Part Number: S595T-GS08
• Manufacturer: Vishay

Specifications of S595T-GS08

• Application: VHF/UHF
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 28/20dB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.3@5VpF
• Output Capacitance (typ)@vds: 1.1@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

S595T / S595TR / S595TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
4
95 10759
95 11157
95 11158
Figure 1. Total Power Dissipation vs. Ambient Temperature
250
200
150
100
50
20
16
12
Figure 3. Drain Current vs. Gate 2 Source Voltage
20
16
12
Figure 2. Drain Current vs. Drain Source Voltage
0
8
4
0
8
4
0
0
0
0
V
T
25
V
V
G2S
amb
DS
DS
1
– AmbientTemperature (° C )
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
1
= 5 V
50
2
75
2
3
100
V
1.5 V
G2S
3
125
= 4 V
4
1 V
3 V
2 V
150
5
4
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
95 11159
13634
13635
Figure 6. Output Capacitance vs. Drain Source Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
0
0
3
0
0
f = 200 MHz
V
V
f = 200 MHz
V
V
f = 200 MHz
V
G2S
V
DS
G2S
DS
DS
DS
1
= 5 V
= 5 V
– Gate 2 Source Voltage ( V )
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
= 4 V
4
1
2
5
2
3
6
3
4
Document Number 85049
Rev. 1.7, 08-Sep-08
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