HUF76419D3S Fairchild Semiconductor, HUF76419D3S Datasheet

no-image

HUF76419D3S

Manufacturer Part Number
HUF76419D3S
Description
MOSFET Power
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HUF76419D3S

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.037 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
20 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252AA
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Rise Time
124 ns, 35 ns
Lead Free Status / Rohs Status
No
©2001 Fairchild Semiconductor Corporation
20A, 60V, 0.043 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Absolute Maximum Ratings
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1. T
(FLANGE)
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DRAIN
J
= 25
HUF76419D3
JEDEC TO-251AA
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
o
C to 150
C
C
C
C
= 25
= 25
= 100
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
o
SOURCE
C, V
C, V
o
o
G
GS
DRAIN
C, V
C, V
GATE
= 20k ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GS
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
SOURCE
T
Data Sheet
For severe environments, see our Automotive HUFA series.
GATE
C
= 25
JEDEC TO-252AA
HUF76419D3S
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76419D3ST
HUF76419D3
HUF76419D3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
HUF76419D3, HUF76419D3S
Electrical Models
DS(ON)
DS(ON)
December 2001
J
, T
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
= 0.037
= 0.043
HUF76419D3, HUF76419D3S
TO-251AA
TO-252AA
GS
V
V
Figures 6, 17, 18
PACKAGE
GS
GS
Curves
-55 to 175
Figure 4
300
260
10V
5V
0.5
60
60
20
20
20
19
75
16
HUF76419D3, HUF76419D3S Rev. B
76419D
76419D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

Related parts for HUF76419D3S

HUF76419D3S Summary of contents

Page 1

... Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUF76419D3 HUF76419D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419D3ST o C, Unless Otherwise Specified , 0.037 10V ...

Page 2

... SD SD MIN TYP (Figure 12 0.031 - 0.036 - 0.038 - - - - - - - 12 - 124 - 6 30V 12.5 = 1.0mA - 0.9 - 2.7 - 5.9 - 900 - 250 - 45 MIN TYP - - - - - - - - HUF76419D3, HUF76419D3S Rev. B MAX UNITS - 250 A 100 0.037 0.043 0.046 o 2.00 C/W o 100 C/W 205 115 150 MAX UNITS 1. 200 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF76419D3, HUF76419D3S Rev 10V 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76419D3, HUF76419D3S Rev +1] DSS 100 3. 10V 20A GS D 120 160 ...

Page 5

... I = 250 A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V DD WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 30V 20A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76419D3, HUF76419D3S Rev. B 120 160 200 20A D = 10A d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76419D3, HUF76419D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF76419D3, HUF76419D3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76419D3, HUF76419D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation } JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76419D3, HUF76419D3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

Related keywords