SI1023X-T1 Vishay, SI1023X-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1023X-T1
• Description: MOSFET Small Signal 20V 0.35A
• Manufacturer: Vishay

Specifications of SI1023X-T1

• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 370 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

Si1023X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71169.
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
Threshold Voltage Variance vs. Temperature
0.05
-4
0.2
0.1
0.02
- 25
Duty Cycle = 0.5
0
T
J
- Temperature (°C)
10
Single Pulse
25
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
75
A
10
= 25 °C, unless otherwise noted)
-2
- 25
100
BV
0
125
GSS
Square Wave Pulse Duration (s)
T
J
- Temperature (°C)
10
vs. Temperature
25
-1
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
- 50
125
- 25
V
GS
= 4.5 V
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
0
I
GSS
DM
JM
T
J
- T
- Temperature (°C)
vs. Temperature
t
A
25
1
= P
t
2
DM
S10-2432-Rev. C, 25-Oct-10
Z
Document Number: 71169
thJA
50
thJA
100
t
t
1
2
(t)
= 500 °C/W
75
100
6
0
0
125