SI6459DQ-T1 Vishay, SI6459DQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6459DQ-T1
• Description: MOSFET Small Signal 60V 2.6A 1.5W
• Manufacturer: Vishay

Specifications of SI6459DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6459DQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
300 s, duty cycle
a
a
Symbol
V
r
r
2%.
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
V
V
DS
I
I
V
D
DS
= –30 V, V
I
F
V
V
= –60 V, V
V
V
V
V
–1 A, V
DS
= –1.25 A, di/dt = 100 A/ s
V
V
V
GS
I
30 V V
S
1 A V
DS
DS
GS
DS
DD
DD
DS
Test Condition
= –1.25 A, V
= 0 V, V
= –4.5 V, I
= V
= –5 V, V
= –10 V, I
= –15 V, I
= –60 V, V
= –30 V, R
GEN
GS
30 V R
GS
GS
, I
GS
= –10 V, I
= –10 V, R
D
,
= 0 V, T
GS
D
D
D
= –250 A
=
10 V I
10 V R
GS
GS
L
L
= –2.4 A
= –2.6 A
= –2.6 A
= –10 V
= 30
20 V
= 0 V
= 0 V
30
J
D
G
= 70 C
= –2.6 A
= 6
2 6 A
6
Min
–1.0
–20
0.100
0.125
Typ
–0.8
7.5
3.7
2.0
16
10
35
12
60
8
S-99446—Rev. D, 29-Nov-99
Document Number: 70186
Max
0.120
0.150
–1.2
–25
–1
25
15
20
50
25
90
100
Unit
nC
nA
ns
V
A
S
V
C
A
A