SI6544DQ-T1 Vishay, SI6544DQ-T1 Datasheet - Page 6

• Manufacturer Part Number: SI6544DQ-T1
• Description: MOSFET Small Signal 30V 4/3.5A
• Manufacturer: Vishay

Specifications of SI6544DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A at N Channel, 3.5 A at P Channel
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6544DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-6
–0.0
–0.2
–0.4
–0.6
0.8
0.6
0.4
0.2
0.01
20
10
0.1
1
0.00
–50
2
1
10
–4
Source-Drain Diode Forward Voltage
–25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.25
V
SD
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
0.50
= 150 C
I
J
D
– Temperature ( C)
= 250 A
25
Single Pulse
10
0.75
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.00
T
J
= 25 C
100
1.25
125
10
Square Wave Pulse Duration (sec)
–2
1.50
150
10
–1
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
2
P
1
DM
JM
0.1
– Gate-to-Source Voltage (V)
Single Pulse Power
– T
t
A
1
= P
Time (sec)
t
2
4
DM
Z
thJA
thJA
t
t
1
2
(t)
1
= 125 C/W
S-56944—Rev. C, 23-Nov-98
6
Document Number: 70668
I
10
D
= 4.0 A
8
30
10
30
10