SI6933DQ Fairchild Semiconductor, SI6933DQ Datasheet - Page 4

• Manufacturer Part Number: SI6933DQ
• Description: MOSFET Small Signal 30V/25V PCh MOSFET Dual
• Manufacturer: Fairchild Semiconductor

Specifications of SI6933DQ

• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 28 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.5 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Typical Characteristics
0.01
100
0.1
10
10
1
Figure 9. Maximum Safe Operating Area.
8
6
4
2
0
0.1
0.001
Figure 7. Gate Charge Characteristics.
0.01
0
0.1
SINGLE PULSE
0.0001
R
1
R
I
D
DS(ON)
JA
V
T
= -4.1A
GS
A
= 125
= 25
= -10V
LIMIT
o
o
C/W
C
D = 0.5
-V
4
0.
DS
0.1
0.05
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
1
Q
g
, GATE CHARGE (nC)
0.001
SINGLE PULSE
DC
8
1s
Figure 11. Transient Thermal Response Curve.
100ms
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
10ms
= -10V
10
0.01
1ms
12
100 s
-20V
-15V
100
16
0.1
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
RSS
0.01
5
-V
Power Dissipation.
C
DS
OSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
1
C
, TIME (sec)
ISS
15
1
P(pk)
Duty Cycle, D = t
T
R
20
J
10
R
100
- T
JA
JA
(t) = r(t) * R
t
A
1
SINGLE PULSE
= 125
R
t
= P * R
2
JA
T
A
Si6933DQ Rev. B (W)
= 125°C/W
100
25
= 25°C
o
C/W
f = 1 MHz
V
GS
JA
1
JA
(t)
= 0 V
/ t
2
1000
1000
30