SI4420DY-T1 Vishay, SI4420DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4420DY-T1
• Description: MOSFET Small Signal 30V 12.5A 2.5W
• Manufacturer: Vishay

Specifications of SI4420DY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4420DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
50
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
Normalized Thermal Transient Impedance, Junction-to-Foot
= 250 mA
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
−2
10
−1
10
1
−1
200
160
120
80
40
0
0.001
Single Pulse Power, Junction-to-Ambient
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
t
1
A
Time (sec)
1
= P
t
2
DM
0.1
Z
thJA
thJA
100
t
t
S-31990—Rev. F, 13-Oct-03
1
2
(t)
Document Number: 71818
= 70_C/W
1
600
10
10