SI2307DS-T1 Vishay, SI2307DS-T1 Datasheet
SI2307DS-T1
Specifications of SI2307DS-T1
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SI2307DS-T1 Summary of contents
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... Continuous Source Current (Diode Conduction Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range Parameter a a Maximum Junction-to-Ambient Maximum Junction-to-Ambient Notes a. Surface mounted on FR4 board sec. Document Number: 70843 S-60570—Rev. A, 16-Nov-98 I (A) D –3 –2 TO-236 (SOT-23 Top View Si2307DS (A7)* *Marking Code Symbol ...
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... Si2307DS Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V Gate-Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Document Number: 70843 S-60570—Rev. A, 16-Nov- 800 700 600 500 400 300 200 100 = On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0 –50 Si2307DS Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...
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... Si2307DS Vishay Siliconix Source-Drain Diode Forward Voltage 10 150 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 A D 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1.00 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...