SI6923DQ-T1 Vishay, SI6923DQ-T1 Datasheet - Page 5

• Manufacturer Part Number: SI6923DQ-T1
• Description: MOSFET Small Signal 20V 3.5A 1.2W
• Manufacturer: Vishay

Specifications of SI6923DQ-T1

• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70792
S-56941—Rev. B, 02-Nov-98
0.0001
0.01
0.001
0.1
0.01
2
1
0.1
10
20
10
1
–4
0
0.2
0.1
0.05
0.02
Reverse Current vs. Junction Temperature
Duty Cycle = 0.5
25
T
J
20 V
– Junction Temperature ( C)
50
10
–3
75
10 V
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
100
250
200
150
100
50
0
0
125
10
–2
Square Wave Pulse Duration (sec)
150
4
New Product
V
KA
– Reverse Voltage (V
Capacitance
C
8
iss
10
12
–1
0.01
0.1
3
1
16
0
T
J
0.1
= 150 C
20
V
F
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
– Forward Voltage Drop (V)
Forward Voltage Drop
P
DM
0.2
JM
www.vishay.com FaxBack 408-970-5600
– T
t
1
A
= P
t
Vishay Siliconix
2
0.3
DM
Z
thJA
thJA
t
t
1
2
(t)
T
0.4
= 130 C/W
Si6923DQ
J
10
= 25 C
0.5
30
0.6
2-5