SI3905DV-T1 Vishay, SI3905DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3905DV-T1
• Description: MOSFET Small Signal 8V 2.5A
• Manufacturer: Vishay

Specifications of SI3905DV-T1

• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: +/- 2.5 A
• Power Dissipation: 1.15 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70973.
Document Number: 70973
S09-2276-Rev. B, 02-Nov-09
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.05
0.1
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si3905DV
www.vishay.com
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