MC100EPT24D ON Semiconductor, MC100EPT24D Datasheet - Page 3

• Manufacturer Part Number: MC100EPT24D
• Description: Translation - Voltage Levels 3.3V LVTTL/LVCMOS
• Manufacturer: ON Semiconductor

Specifications of MC100EPT24D

• Logic Type: Translator
• Logic Family: ECL
• Package / Case: SOIC-8
• Translation: LVCMOS/LVTTL to LVECL
• Propagation Delay Time: 0.8 ns
• Supply Voltage (max): - 3.6 V
• Supply Voltage (min): - 3 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Dc: 03+
• Lead Free Status / Rohs Status: No RoHS Version Available

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Output levels will vary 1:1 with GND. V
4. Outputs are terminated through a 50 W resistor to GND − 2 V.
Table 3. MAXIMUM RATINGS
Table 4. LVTTL INPUT DC CHARACTERISTICS
Table 5. NECL OUTPUT DC CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
I
T
T
q
q
q
q
q
T
q
I
I
I
V
V
V
V
V
I
I
out
IH
IHH
IL
CC
EE
A
stg
JA
JC
JA
JC
JA
sol
JC
CC
EE
IN
IK
IH
IL
OH
OL
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Positive Power Supply
Negative Power Supply
Input Voltage
Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Thermal Resistance (Junction−to−Case)
Input HIGH Current
Input HIGH Current HIGH Voltage
Input LOW Current
Input Clamp Voltage
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 4)
Positive Power Supply Current
Negative Power Supply Current
Characteristic
Characteristic
Parameter
EE
can vary ± 0.3 V.
Pb−Free
-1145
-1945
Min
20
Pb
V
http://onsemi.com
CC
V
V
V
V
I
IN
CC
IN
CC
IN
GND = 0 V
GND = 0 V
GND = 0 V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
(Note 2)
= 3.3 V, V
−40°C
−1020
−1820
= −18 mA
Typ
= 2.7 V
= 0.5 V
2.0
30
= 3.3 V, V
= V
Condition 1
IN
3
Condition
= 3.8 V
-1695
-895
Max
EE
4.0
38
EE
= −3.6 V to −3.0 V, GND = 0.0 V; T
= −3.3 V, GND = 0.0 V (Note 3)
-1145
-1945
Min
20
V
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
DFN8
DFN8
DFN8
EE
CC
I
v V
−1020
−1820
Condition 2
25°C
= −3.3V
Typ
= 3.3V
2.0
30
CC
Min
2.0
-1695
Max
-895
4.0
38
-1945
-1145
Min
Typ
20
A
= −40°C to 85°C
−65 to +150
−40 to +85
0 to V
−1030
−1820
41 to 44
41 to 44
35 to 40
Rating
85°C
Typ
2.0
30
−3.8
100
190
130
185
140
129
265
265
3.8
50
84
Max
−0.6
−1.0
100
0.8
20
CC
-1695
Max
-895
4.0
38
Unit
mA
mA
mA
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
V
V
V
Unit
Unit
mA
mA
mV
mV
mA
mA
°C
°C
°C
V
V
V