SI9926BDY Vishay, SI9926BDY Datasheet - Page 3

• Manufacturer Part Number: SI9926BDY
• Description: MOSFET Small Signal NCH DUAL MOSFET 2.5V (G-S)
• Manufacturer: Vishay

Specifications of SI9926BDY

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 1.14 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72278
S-61006-Rev. B, 12-Jun-06
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
0
5
4
3
2
1
0
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 8.2 A
2
V
5
0.3
V
GS
= 10 V
SD
Q
T
= 2.5 V
J
g
- Source-to-Drain Voltage (V)
= 150 °C
I
10
D
- Total Gate Charge (nC)
4
Gate Charge
- Drain Current (A)
0.6
15
6
0.9
T
J
= 25 °C
20
8
V
GS
1.2
10
= 4.5 V
25
1.5
12
30
1600
1400
1200
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
= 8.2 A
I
D
V
= 4.5 V
= 3.3 A
4
V
1
DS
T
GS
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
25
Capacitance
oss
8
2
I
D
50
C
Vishay Siliconix
= 8.2 A
iss
Si9926BDY
12
75
3
www.vishay.com
100
16
4
125
150
20
5
3