SI5463EDC-T1 Vishay, SI5463EDC-T1 Datasheet

no-image

SI5463EDC-T1

Manufacturer Part Number
SI5463EDC-T1
Description
MOSFET Small Signal 20V 5.1A 2.3W
Manufacturer
Vishay
Datasheet

Specifications of SI5463EDC-T1

Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 3.8 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
1206-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5463EDC-T1
Manufacturer:
COGENCY
Quantity:
234
Part Number:
SI5463EDC-T1-E3
Quantity:
1 628
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. When using HBM. The MM rating is 300 V.
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
Ordering Information: Si5463EDC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
V
DS
- 20
(V)
D
1206-8 ChipFET
D
Bottom View
D
D
S
D
0.062 at V
0.068 at V
0.085 at V
0.120 at V
Si5463EDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
R
®
G
a
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
GS
(Ω)
= - 4.5 V
= - 3.6 V
= - 2.5 V
= - 1.8 V
P-Channel 20-V (D-S) MOSFET
a
Marking Code
LB XX
c, d
A
Part #
Code
= 25 °C, unless otherwise noted
I
D
- 5.1
- 4.9
- 4.4
- 3.7
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
Lot Traceability
and Date Code
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
Symbol
Symbol
T
Available
ESD Protected
R
R
J
V
V
I
P
, T
I
DM
thJA
I
thJF
DS
GS
D
S
D
stg
G
Typical
b
- 5.1
- 3.7
- 1.9
5 s
2.3
1.2
5000 V
45
84
20
5.4 k Ω
- 55 to 150
P-Channel MOSFET
± 12
- 20
- 15
260
Steady State
Maximum
- 3.8
- 2.7
- 1.0
1.25
0.65
100
55
25
Vishay Siliconix
S
D
Si5463EDC
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI5463EDC-T1

SI5463EDC-T1 Summary of contents

Page 1

... GS ® 1206-8 ChipFET Bottom View Ordering Information: Si5463EDC-T1-E3 (Lead (Pb)-free) Si5463EDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5463EDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71364 S09-0129-Rev. D, 02-Feb °C J 0.8 1.0 1.2 Si5463EDC Vishay Siliconix 2000 1500 C iss 1000 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 ...

Page 4

... Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 Temperature ( J Threshold Voltage 1000 800 600 400 200 Gate-to-Source Voltage (V) GS Gate-Source Voltage vs. Gate Current 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71364. Document Number: 71364 S09-0129-Rev. D, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5463EDC Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords