SI3457DV-T1 Vishay, SI3457DV-T1 Datasheet - Page 2

• Manufacturer Part Number: SI3457DV-T1
• Description: MOSFET Small Signal 30V 4.3A 2W
• Manufacturer: Vishay

Specifications of SI3457DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si3457DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
300 s, duty cycle
a
a
2%.
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
V
DS
I
V
D
DS
= –
I
F
V
= –30 V, V
V
V
V
V
–1 A, V
V
V
V
15
= –1.7 A, di/dt = 100 A/ s
GS
I
DS
V
DS
GS
DS
S
DS
DD
DD
Test Condition
DS
= –1.7 A, V
= –4.5 V, I
V, V
= –5 V, V
= V
= –15 V, I
= –10 V, I
= –
= –30 V, V
= 0 V, V
GEN
GS
15
15
GS
GS
, I
V, R
V, R
= –10 V, R
= –10 V, I
D
= 0 V, T
GS
GS
D
D
D
= –250 A
GS
GS
L
L
= –3.4 A
= –4.3 A
= –4.3 A
= –10 V
=
= 15
= 0 V
= 0 V
15
J
20 V
D
G
= 70 C
= –4.3 A
= 6
Min
–1.0
–15
Typ
2.2
1.7
11
11
30
11
50
6
7
S-56944—Rev. C, 23-Nov-98
Document Number: 70644
Max
0.065
0.100
–1.2
–1
–5
20
15
20
50
20
80
100
Unit
nA
nC
ns
V
A
S
V
A
A
C