IRF7311 International Rectifier, IRF7311 Datasheet - Page 2

• Manufacturer Part Number: IRF7311
• Description: DUAL N CHANNEL MOSFET, 20V, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7311

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 700mV
• Rohs Compliant: No

IRF7311
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
I
r
f
S
SM
rr
DSS
V
fs
GSS
(BR)DSS
GS(th)
iss
oss
rss
SD
g
gs
gd
DS(on)
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= 25°C, L = 12mH
AS
= 4.1A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
–––
––– 0.027 –––
––– 0.023 0.029
––– 0.030 0.046
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.72
–––
–––
Surface mounted on 1 in square Cu board
0.7
20
J
150°C
4.1A, di/dt
–––
–––
–––
–––
–––
––– -100
900
430
200
–––
2.2
6.2
8.1
–––
20
18
17
38
31
52
58
–––
–––
–––
–––
100
–––
–––
1.0
5.0
3.3
9.3
26
1.0
300µs; duty cycle
27
12
25
57
47
2.5
77
86
92A/µs, V
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz, See Fig. 9
V
V
V
R
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
DD
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 6.0A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 10
= V
= 10V, I
= 16V, V
= 16V, V
= 10V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 12V
= -12V
= 4.5V, See Fig. 10
= 10V
= 0V
V
2%.
(BR)DSS
GS
Conditions
, I
D
S
F
D
D
Conditions
= 250µA
D
D
GS
GS
= 1.7A, V
= 1.7A
,
= 250µA
= 6.0A
= 6.0A
= 5.2A
= 0V
= 0V, T
D
= 1mA
GS
J
= 55°C
= 0V
G
D
S