A42L0616V-50F AMIC, A42L0616V-50F Datasheet - Page 8

58T1323

A42L0616V-50F

Manufacturer Part Number
A42L0616V-50F
Description
58T1323
Manufacturer
AMIC
Datasheet

Specifications of A42L0616V-50F

Memory Type
DRAM
Memory Configuration
1M X 16
Access Time
50ns
Memory Case Style
TSOPII
No. Of Pins
44
Operating Temperature Range
0°C To +70°C
Ic Generic Number
42L0616
Memory Size
16Mbit
Rohs Compliant
Yes
AC Characteristics (continued)
Test Conditions:
(July, 2004, Version 1.1)
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
#
Input timing reference level: V
Output reference level: V
Output Load: 2TTL gate + CL (50pF)
Assumed t
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Std
T
WCS
WCH
WCR
t
RWL
CWL
t
RWC
RWD
CWD
AWD
CRW
CAH
OES
t
DHR
OEH
OEP
t
PCM
ASC
CPA
WP
DS
DH
PC
CP
T
=2ns
Column Address Setup Time
Column Address Hold Time
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time to RAS
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in setup Time
Data-in Hold Time
Data-in Hold Time to RAS
Read-Modify-Write Cycle Time
Column Address to WE Delay Time
(Read-Modify-Write)
Read or Write Cycle Time (EDO Page)
Access Time from CAS Precharge (EDO Page)
EDO Page Mode RMW Cycle Time
EDO Page Mode CAS Pulse Width (RMW)
OE
RAS to WE Delay Time (Read-Modify-Write)
CAS to WE Delay Time (Read-Modify-Write)
OE Hold Time from WE
OE High Pulse Width
CAS Precharge Time
Low to CAS High Set Up
OH
/V
OL
IH
/V
=2.0V/0.8V
IL
(VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0 ° C to +70 ° C or -40 ° C to +85 ° C)
=2.0V/0.8V
Parameter
7
Min.
104
10
40
12
40
59
26
34
18
46
35
0
7
0
7
7
7
0
7
7
5
7
-
-45
Max.
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AMIC Technology, Corp.
Min.
114
10
45
13
45
65
28
37
20
50
38
0
8
0
8
8
8
0
8
8
5
8
-
A42L0616 Series
-50
Max.
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
11
11
12
12
11
11
11
14
13

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