IR2304S International Rectifier, IR2304S Datasheet - Page 3

• Manufacturer Part Number: IR2304S
• Description: MOSFET DRVR 600V 0.13A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC
• Manufacturer: International Rectifier

Specifications of IR2304S

• Package: 8SOIC
• Driver Configuration: Non-Inverting
• Driver Type: High and Low Side
• Peak Output Current: 0.13(Min) A
• Input Logic Compatibility: CMOS|LSTTL|3.3V(Min)|5V|15V
• Number Of Outputs: 2
• Maximum Fall Time: 170 ns
• Maximum Rise Time: 300 ns
• Maximum Power Dissipation: 625 mW
• Operating Temperature: -40 to 125 °C

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Static Electrical Characteristics
V
COM. The V
Dynamic Electrical Characteristics
V
Symbol
Symbol
BIAS
BIAS
V
V
V
V
V
V
CCUVH
CCUV+
BSUVH
BSUV+
I
CCUV-
I
BSUV-
V
V
QCC
I
QBS
V
I
I
t on
t off
MT
I
V
I
DT
IN+
IN-
O+
LK
OH
O-
t r
t f
OL
IH
IL
(V
(V
CC
CC
, V
, V
O
BS
BS
and I
V
threshold
V
threshold
V
Offset supply leakage current
Quiescent V
Quiescent V
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V
Low level output voltage, V
Logic “1” input bias current
Logic “0” input bias current
Output high short circuit pulse current
Output low short circuit pulsed current
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Dead time
Delay matching, HS & LS turn-on/off
CC
CC
CC
) = 15V and T
) = 15V, V
and V
and V
O
supply undervoltage lockout hysteresis
parameters are referenced to COM and V
BS
BS
CC
BS
S
supply undervoltage negative going
supply undervoltage positive going
= COM, C
supply current
supply current
A
= 25°C unless otherwise specified. The V
Definition
Definition
L
= 1000 pF and T
O
BIAS
- V
O
A
= 25°C unless otherwise specified.
S
is applicable to HO and LO.
Min. Typ. Max. Units Test Conditions
Min. Typ. Max. Units Test Conditions
130
120
130
7.4
0.3
2.3
20
50
60
60
20
—
—
—
—
—
—
80
—
8
IN
, V
120
220
220
200
100
100
8.9
8.2
0.7
1.0
TH
60
—
—
—
—
—
—
—
—
5
and I
IR2304(S)&(PbF)
320
330
300
170
190
150
240
50
9.8
0.8
2.8
1.2
2.0
50
40
—
—
—
—
IN
9
parameters are referenced to
mA
µA
µA
ns
V
V
V
V
V
V
S
B
IN
IN
I
PW ≤ 10 µs
= 0V or 600V
O
= V
V
V
V
V
= 0V or 5V
= 0V or 5V
IN
IN
S
= 20mA
O
S
= 0V
= 5V
= 0V
= 0V
= 600V
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