LM831N National Semiconductor, LM831N Datasheet - Page 2

• Manufacturer Part Number: LM831N
• Description: Audio Amp Speaker 1-CH Mono/2-CH Stereo 0.44W Class-AB 16-Pin MDIP Rail
• Manufacturer: National Semiconductor

Specifications of LM831N

• Package: 16MDIP
• Function: Speaker
• Amplifier Type: Class-AB
• Typical Voltage Gain: 48 dB
• Total Harmonic Distortion Noise: 0.25@50mW %
• Typical Psrr: 46 dB
• Output Signal Type: Differential|Single
• Output Type: 1-Channel Mono|2-Channel Stereo
• Maximum Input Bias Current: 2@3V uA
• Maximum Load Resistance: 8 Ohm

Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage V
Input Voltage V
Power Dissipation (Note 1) P
Operating Temperature (Note 1) T
Electrical Characteristics
Unless otherwise specified T
Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
of 98 C W junction to ambient for the M package or 90 C W junction to ambient for the N package
Connection Diagram
Symbol
V
I
V
R
A
PSRR
P
P
P
P
Sep
I
E
THD
Q
B
S
OS
V
OD
ODL
OB
OBL
n0
IN
Operating Voltage
Supply Current
Output DC Offset
Input Resistance
Voltage Gain
Supply Rejection
Power Out
Power Out Low V
Power Out
Power Out Low V
Channel Separation
Input Bias Current
Output Noise
Distortion
IN
S
Parameter
D
A
e
S
S
opr
25 C V
1 3W (M Package)
V
V
V
V
Dual Mode
V
V
10% THD Dual Mode
V
10% THD Dual Mode
V
10% THD BTL Mode
V
10% THD BTL Mode
Referenced to V
Wide Band (250 E 35 kHz)
V
f
1 4W (N Package)
b
S
See NS Package Number M16B or N16E
IN
IN
IN
IN
S
S
S
S
S
S
e
40 C to
e
e
e
e
e
e
e
e
e
e
e
1 kHz Dual
3V f
3V
3V R
1 8V R
3V R
1 8V R
3V P
0 Dual Mode
0 BTL Mode
0 BTL Mode
2 25 mV
Order Number LM831M or N
a
Dual-In-Line Package
a
O
g
e
L
L
Conditions
200 mV
85 C
e
L
e
L
7 5V
0 4V
e
1 kHz test circuit is dual or BTL amplifier with minimum parts
rms
e
e
4
8
O
50 mW
Top View
4
8
e
f
rms
e
200 mV
2
1 kHz
Storage Temperature T
Junction Temperature T
Lead Temp (Soldering 10 sec ) T
Thermal Resistance
f
e
rms
JC
JA
JC
JA
1 kHz
(DIP)
(SO Package)
(DIP)
(SO Package)
0 25
Typ
220
440
250
10
25
46
46
45
90
52
3
3
5
6
1
stg
j
TL H 6754 – 2
Tested Limit
150
300
500
1 8
10
15
50
15
35
44
48
30
10
20
40
6
2
1
L
b
65 C to
Unit (Limit)
mA (Max)
mA (Max)
mV (Max)
mW (Min)
mW (Min)
mW (Min)
mW (Min)
dB (Max)
dB (Min)
dB (Min)
dB (Min)
% (Max)
k (Max)
V(Max)
V(Min)
k (Min)
A (Max)
V (Max)
a
a
a
27 C W
75 C W
20 C W
95 C W
150 C
150 C
260 C