PH1214-80M M/A-Com Technology Solutions, PH1214-80M Datasheet - Page 2

• Manufacturer Part Number: PH1214-80M
• Description: Trans GP BJT NPN 70V 2-Pin Hermetic Metal
• Manufacturer: M/A-Com Technology Solutions
• Type: NPNr

Specifications of PH1214-80M

• Maximum Collector Emitter Voltage: 70 V
• Maximum Emitter Base Voltage: 3 V

2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
Gain vs. Frequency
PH1214-80M
Radar Pulsed Power Transistor
80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
RF Test Fixture Impedance
(GHz)
Freq.
1.2
1.3
1.4
F (GHz)
9.5
9.1
8.7
8.3
7.9
7.5
1.2
1.3
1.4
1.20
Pin
(W)
13
13
13
1.25
9.4 - j4.5
8.3 - j2.8
7.9 - j1.3
Z
IF
Fre q (GHz)
(Ω)
Pout
106
102
(W)
98
1.30
Gain
3.0 + j2.1
(dB)
9.13
8.78
8.96
7.0 - j2.8
4.5 - j3.2
Z
1.35
OF
(Ω)
1.40
4.83
4.66
4.61
(A)
Ic
55.1
52.7
55.6
(%)
Eff
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Collector Efficiency vs. Frequency
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
66
62
58
54
50
46
1.20
-15.4
-15.5
-14.9
(dB)
RL
1.25
VSWR-S
(1.5:1)
S
S
S
Fre q (GHz)
M/A-COM Products
Released, 30 May 07
1.30
VSWR-T
(3:1)
P
P
P
1.35
1.40