LMX2331LSLBX National Semiconductor, LMX2331LSLBX Datasheet - Page 6

• Manufacturer Part Number: LMX2331LSLBX
• Description: PLL Frequency Synthesizer Dual 45MHz to 2000MHz 24-Pin LAM CSP T/R
• Manufacturer: National Semiconductor
• Type: PLL Frequency Synthesizerr

Specifications of LMX2331LSLBX

• Package: 24LAM CSP
• Number Of Elements Per Chip: 2
• Operating Temperature: -40 to 85 °C
• Operating Supply Voltage: 3 V

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I
I
f
f
f
f
Pf
Pf
V
V
V
I
I
I
I
V
V
t
Symbol
CC
CC-PWDN
IN
IN
OSC
φ
IH
IL
IH
IL
CS
OSC
IH
IL
OH
OL
IN
IN
Absolute Maximum Ratings
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
V
RF
IF
Power Supply Voltage
Voltage on Any Pin
Storage Temperature Range (T
Lead Temperature (solder 4 sec.)
(T
CC
RF
IF
L
V
V
with GND = 0V (V
)
= 3.0V, V
CC
P
Power
Supply
Current
Powerdown Current
Operating
Frequency
Operating
Frequency
Oscillator Frequency
Maximum Phase Detector
Frequency
RF Input Sensitivity
IF Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current
Low-Level Input Current
Oscillator Input Current
Oscillator Input Current
High-Level Output Voltage (for
F
Low-Level Output Voltage (for
F
Data to Clock Set Up Time
o
o
LD, pin number 10)
LD, pin number 10)
P
= 3.0V; −40°C < T
I
)
Parameter
S
)
A
< 85°C, except as specified
12806 Version 9 Revision 2
−0.3V to V
LMX2330L RF + IF
LMX2330L RF Only
LMX2331L RF + IF
LMX2331L RF Only
LMX2332L IF + RF
LMX2332L RF Only
LMX233xL IF Only
LMX2330L
LMX2331L
LMX2332L
LMX233xL
−65°C to +150°C
−0.3V to +6.5V
−0.3V to +6.5V
(Note
CC
+260°C
1,
+0.3V
Note
Print Date/Time: 2011/07/11 15:54:42
6
V
(Note
V
V
V
OSC
(Note
(Note
V
4)
V
(Note
V
V
I
I
See Data Input Timing
OH
OL
CC
CC
CC
CC
IH
IL
IH
IL
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate
conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. For guaranteed specifications and
test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating <2 keV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD protected work stations.
Power Supply Voltage
Operating Temperature (T
= 500 μA
= 0V, V
= 0V, V
= −500 μA
= V
= V
= 2.7V to 5.5V
= 3.0V
= 5.0V
= 2.7V to 5.5V
in
V
V
3)
4)
4)
4)
Conditions
CC
P
CC
CC
= 5.5V
= 5.5V
CC
CC
= 5.5V
= 5.5V
(Note
V
0.8 V
CC
A
−100
−1.0
−1.0
)
Min
−15
−10
−10
0.5
0.2
0.1
0.5
45
10
50
5
− 0.4
CC
Value
Typ
5.0
4.0
4.0
3.0
3.0
2.0
1.0
1
−40°C to +85°C
0.2 V
V
2.7V to 5.5V
Max
510
100
CC
6.6
5.2
5.4
4.0
4.1
2.7
1.4
2.5
2.0
1.2
1.0
1.0
0.4
10
40
0
0
0
to +5.5V
CC
Units
GHz
MHz
MHz
MHz
dBm
dBm
dBm
V
mA
μA
μA
μA
μA
μA
ns
V
V
V
V
PP