SI8631BC-B-IS1R Silicon Laboratories Inc, SI8631BC-B-IS1R Datasheet - Page 11
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SI8631BC-B-IS1R
Manufacturer Part Number
SI8631BC-B-IS1R
Description
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI8631BC-B-IS1R.pdf
(38 pages)
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Table 10. IEC Safety Limiting Values
Table 9. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Case Temperature
Safety Input Current
Device Power Dissipation
Notes:
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T
V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
IO
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 3, 4, and 5.
2. The Si86xx is tested with AVDD, BVDD = 5.5 V; T
= 500 V
50% duty cycle square wave.
40/125/21.
Parameter
Parameter
2
S
,
Symbol
P
T
I
S
S
D
Symbol
V
V
V
IORM
IOTM
R
PR
S
105 °C/W (NB SOIC-16), 140 °C/W
1
JA
T
= 100 °C/W (WB SOIC-16),
AVDD, BVDD = 5.5 V,
(V
J
Production Test, t
= 150 °C, T
Partial Discharge < 5 pC)
IORM
Test Condition
(NB SOIC-8)
J
Test Condition
= 150 ºC; C
Rev. 1.1
x 1.875 = V
Method b1
t = 60 sec
A
= 25 °C
1
m
, C
PR
= 1 sec,
2
, 100%
= 0.1 µF; C
SOIC-8
150
160
220
NB
3
SOIC-16
= 15 pF; R1, R2 = 3kinput 1 MHz
1200
2250
6000
>10
WB
2
Characteristic
9
SOIC-16
150
210
275
NB
NB SOIC-8
SOIC-16
6000
1182
>10
630
SOIC-16
2
Si860x
9
WB
150
220
275
Vpeak
Vpeak
Vpeak
Unit
Unit
mA
°C
W
11