IRF7314QPBF International Rectifier, IRF7314QPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7314QPBF
• Description: 58M7392
• Manufacturer: International Rectifier

Specifications of IRF7314QPBF

• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 49mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Power Dissipation Pd: 2.4W
• Rohs Compliant: Yes
• Transistor Polarity: P Channel

Q
R
IRF7314Q
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
I
DSS
V
2
fs
SD
GSS
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
R
(BR)DSS
max. junction temperature.
Starting T
G
= 25 , I
/ T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 45mH
AS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= -5.2A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.009 –––
––– 0.049 0.058
––– 0.082 0.098
-0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
6.8
S
T
Surface mounted on FR-4 board, t
Pulse width
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
913
512
260
2.1
9.3
44
54
19
18
26
41
38
-1.0
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
-43
-25
-3.0
3.2
66
81
29
14
V/°C
300µs; duty cycle
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
MOSFET symbol
p-n junction diode.
T
T
di/dt = -100A/µs
showing the
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -5.2A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= 10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -4.5V
= -10V
= -4.5V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
R
= -250µA
2%.
= -3.0A, V
= -3.0A
D
D
GS
GS
= -250µA
= -5.2A
= -5.2A
= -4.42A
R
10sec.
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
R
J
R
G
= 150°C
= 0V
R
S
D