IRF7317TR International Rectifier, IRF7317TR Datasheet

IRF7317TR

Manufacturer Part Number

IRF7317TR

Description

07B1418

Manufacturer

International Rectifier

Datasheet

1.IRF7317TR.pdf (10 pages)

Specifications of IRF7317TR

Transistor Polarity

N And P Channel

Continuous Drain Current Id

6.6A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

29mohm

Rds(on) Test Voltage Vgs

4.5V

Threshold Voltage Vgs Typ

700mV

Rohs Compliant

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Thermal Resistance Ratings

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications.

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

Absolute Maximum Ratings ( T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Fully Avalanche Rated

With these improvements,

Parameter

= 25°C Unless Otherwise Noted)

PRELIMINARY

= 25°C

= 70°C

= 25°C

= 70°C

G 2

G 1

S 1

Symbol

dv/dt

N -C H A N N EL M O S FET

P -C H AN N E L MO S FET

STG

T o p V ie w

Symbol

N-Channel

HEXFET

100

6.6

5.3

2.5

4.1

5.0

-55 to + 150 °C

Maximum

D 1

D 2

S O -8

± 12

0.20

2.0

1.3

P-Channel

DS(on)

DSS

IRF7317

Limit

Power MOSFET

62.5

-5.3

-4.3

-2.5

150

-2.9

-5.0

-20

-21

0.029

N-Ch

20V

PD - 9.1568B

Units

°C/W

0.058

V/ ns

-20V

P-Ch

12/9/97

Related parts for IRF7317TR

IRF7317TR Summary of contents

Page 1

... Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...

Page 2

IRF7317 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

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IRF7317TR International Rectifier, IRF7317TR Datasheet

IRF7317TR

Specifications of IRF7317TR

Available stocks

Related parts for IRF7317TR

IRF7317TR Summary of contents

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