MCH6602-TL-E ON Semiconductor, MCH6602-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6602-TL-E
• Description: MOSFET N-CH DUAL 30V 350MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6602-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.58nC @ 10V
• Input Capacitance (ciss) @ Vds: 7pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm
7022A-006
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
PW=10µs
D.C.≤1%
P.G
4V
0V
6
1
6
1
0.65
V IN
Parameter
2.0
5
2
5
2
V IN
4
3
3
4
G
0.3
50Ω
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
V DD =15V
D
S
0 to 0.02
R L =187.5Ω
I D =80mA
MCH6602
Symbol
t d (on)
t d (off)
V SD
Qgs
Qgd
V OUT
Qg
t r
t f
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =150mA
V DS =10V, V GS =10V, I D =150mA
V DS =10V, V GS =10V, I D =150mA
I S =150mA, V GS =0V
MCH6602
Conditions
Electrical Connection
6
1
2
5
min
4
3
Ratings
typ
1.58
0.26
0.31
0.87
155
120
19
65
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
max
1.2
No.6445-2/5
Unit
nC
nC
nC
ns
ns
ns
ns
V