EMH2408-TL-H ON Semiconductor, EMH2408-TL-H Datasheet - Page 2

• Manufacturer Part Number: EMH2408-TL-H
• Description: MOSFET N-CH DUAL 20V 4A EMH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EMH2408-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 345pF @ 10V
• Power - Max: 1.2W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7045-002
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4.5V
1
0V
8
PW=10μs
D.C.≤1%
0.5
0.2
V IN
2.0
Parameter
4
5
V IN
50Ω
G
V DD =10V
D
S
I D =2A
R L =5Ω
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
EMH2408
0.125
Symbol
V OUT
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4.5V, I D =4A
V DS =10V, V GS =4.5V, I D =4A
V DS =10V, V GS =4.5V, I D =4A
I S =4A, V GS =0V
EMH2408
Conditions
Electrical Connection
8
1
7
2
min
6
3
Ratings
5
4
typ
0.65
345
9.2
4.7
1.6
0.8
67
52
60
30
38
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
max
1.2
No. A1170-2/4
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V