ECH8653-TL-H ON Semiconductor, ECH8653-TL-H Datasheet
ECH8653-TL-H
Specifications of ECH8653-TL-H
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ECH8653-TL-H Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8653 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
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... Switching Time Test Circuit V DD =10V = =2.5Ω D PW=10µs D.C.≤1% G ECH8653 P.G 50Ω S ECH8653 Symbol Conditions R DS (on =4A = (on =4A =4V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit. ...
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... Drain-to-Source Voltage (on Gate-to-Source Voltage fs =10V 1 0 0.01 0.1 1.0 Drain Current Time -- I D 1000 100 1 0.01 0.1 1.0 Drain Current ECH8653 =10V =2. 0.4 0.5 0 IT12471 40 Ta=25 ° = --60 --40 IT12473 1 0 0.01 0 IT12475 =10V 1000 100 IT12477 ...
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... Ambient Temperature °C Note on usage : Since the ECH8653 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...