FW813-TL-H ON Semiconductor, FW813-TL-H Datasheet - Page 3
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FW813-TL-H
Manufacturer Part Number
FW813-TL-H
Description
MOSFET N-CH DUAL 60V 5A 8SOP
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.FW813-TL-H.pdf
(4 pages)
Specifications of FW813-TL-H
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
49 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
725pF @ 20V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
100
140
120
100
1.0
0.1
1.0
10
10
80
60
40
20
10
0
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V DS =30V
I D =5A
1
I D =3A
2
2
2
2
3
3
Gate-to-Source Voltage, V GS -- V
5 7
3
5A
4
Total Gate Charge, Qg -- nC
4
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
5
5
V GS -- Qg
|
6
y
6
t d (on)
7
fs | -- I D
2
7
1.0
3
8
8
5 7
9
10
2
1.0
10 11
3
12
2
12
V DD =30V
V GS =10V
V DS =10V
3
Ta=25 ° C
5
13
14
IT16124
IT16126
IT16130
5 7
IT16128
7
14
10
FW813
16
10
15
1000
0.01
0.01
100
100
140
120
100
1.0
0.1
1.0
0.1
10
10
10
80
60
40
20
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.01
0
--60 --40 --20
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25° C
Single pulse
When mounted on ceramic substrate (2000mm
Operation in this
area is limited by R DS (on).
2 3
5
0.2
10
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- ° C
0.1
15
0.4
0
20
2 3
R DS (on) -- Ta
20
I S -- V SD
25
0.6
5 7
A S O
40
1.0
30
60
0.8
35
2 3
80
40
5 7
2
×0.8mm) 1unit
1.0
100
45
10
No. A1884-3/4
120
50
2 3
V GS =0V
1.2
f=1MHz
140
IT16131
IT16125
IT16127
IT16129
55
5
7
160
100
1.4
60