Ordering number : ENA1549
FW282
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : W282
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
4V drive.
Composite type, facilitating high-density mounting.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
V GSS
I D
I D
I DP
P D
P T
Tch
Tstg
Symbol
Symbol
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SANYO Semiconductors
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
When mounted on ceramic substrate (2000mm
I D =1mA, V GS =0V
V DS =35V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =6A
I D =6A, V GS =10V
I D =3A, V GS =4.5V
I D =3A, V GS =4V
FW282
Conditions
Conditions
2
×0.8mm) 1unit, PW≤10s
2
×0.8mm), PW≤10s
90209PA TK IM TC-00002093
DATA SHEET
min
1.5
1.8
35
Ratings
typ
Ratings
28
43
52
3
Continued on next page.
--55 to +150
max
±20
±10
150
6.5
1.8
2.2
2.6
35
24
37
61
73
No. A1549-1/4
6
1
Unit
Unit
mΩ
mΩ
mΩ
°C
°C
μA
μA
W
W
A
A
A
S
V
V
V
V