FW906-TL-E ON Semiconductor, FW906-TL-E Datasheet - Page 4

• Manufacturer Part Number: FW906-TL-E
• Description: MOSFET N/P-CH 30V 8A 8SOP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of FW906-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 6A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
1.0
0.1
1.0
10
--6
--5
--4
--3
--2
--1
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0
0.1
0
0
V DS =10V
V DS =15V
I D =8A
--0.1 --0.2
1
2 3
2
2
3
Drain-to-Source Voltage, V DS -- V
5 7
t d (on)
3
Total Gate Charge, Qg -- nC
0.1
--0.3
5
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
4
7
V GS -- Qg
|
2
--0.4
I D -- V DS
1.0
y
5
3
fs | -- I D
--0.5
5 7
6
2
1.0
--0.6
7
3
2
8
--0.7
5
3
7
9
5 7
--0.8
10
V DD =15V
V GS =10V
10
10
--0.9
IT15825
IT15827
IT15829
IT15831
[Nch]
[Nch]
11
[Nch]
[Pch]
2
2
--1.0
12
3
3
FW906
1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0.01
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.2
0
0
V DS = --10V
Ta=25° C
Single pulse
When mounted on ceramic substrate
(2000mm
Operation in this
area is limited by R DS (on).
2 3
--0.5
5
0.4
Ciss, Coss, Crss -- V DS
2
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Gate-to-Source Voltage, V GS -- V
×0.8mm) 1unit
0.1
--1.0
10
2
I D -- V GS
I S -- V SD
0.6
3
--1.5
A S O
5 7
Ciss
15
1.0
--2.0
0.8
2
20
3
--2.5
5 7
1.0
10
No. A1809-4/6
25
V GS =0V
--3.0
f=1MHz
2 3
IT15826
IT15828
IT15830
IT15832
[Nch]
[Nch]
[Nch]
[Pch]
--3.5
1.2
30
5