IRFB812PBF International Rectifier, IRFB812PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB812PBF
• Description: MOSFET Power Gen 10.7 FredFet 500V 1.5Ohm
• Manufacturer: International Rectifier

Specifications of IRFB812PBF

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 78 W
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 13.3 nC
• Lead Free Status / Rohs Status: Details


‚
ƒ
V
ΔV
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
C
E
I
E
R
R
R
Static @ T
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Notes:
DSS
GSS
d(on)
r
d(off)
f
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
oss
AS
AR
θJC
θCS
θJA
g
gs
gd
2
Repetitive rating; pulse width limited by
(BR)DSS
I
T
max. junction temperature. (See Fig. 11)
Starting T
SD
Symbol
Symbol
Symbol
Symbol
I
AS
J
eff.
eff. (ER)
≤ 150°C.
= 3.6A, di/dt ≤ 520A/μs, V
= 1.8A. (See Figure 13).
/ΔT
J
J
= 25°C, L = 93mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
DD
h
V
G
Ù
(BR)DSS
h
= 25Ω,
,
™
„
…
†
Pulse width ≤ 300μs; duty cycle ≤ 2%.
C
C
as C
as C
oss
oss
θ
Min. Typ. Max. Units
Min. Typ. Max. Units
eff. is a fixed capacitance that gives the same charging time
oss
oss
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
eff.(ER) is a fixed capacitance that stores the same energy
3.0
7.6
while V
while V
0.37
1.75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
810
610
7.3
5.9
14
22
24
17
47
16
37
DS
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
Typ.
-100
Typ.
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.2
5.0
2.0
7.3
7.1
0.5
25
20
V/°C
mA
μA
nA
nC
pF
ns
Ω
V
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 3.6A
= 3.6A
= 17Ω
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig.14a &14b
= 250V
= 10V, See Fig. 15a & 15b
= 0V
= 0V, V
= 0V, V
= 0V,V
GS
Max.
Max.
150
–––
DSS
, I
1.8
7.8
1.6
62
Conditions
Conditions
DSS
D
DS
D
DS
DS
D
D
= 250μA
.
= 250μA
= 2.2A
= 2.2A
= 0V to 400V
GS
GS
.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
www.irf.com
= 0V
= 0V, T
D
f
= 250μA
J
= 125°C
Units
Units
°C/W
mJ
mJ
g
A
f
f