STF24NM60N STMicroelectronics, STF24NM60N Datasheet - Page 5

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STF24NM60N

Manufacturer Part Number
STF24NM60N
Description
MOSFET Power N-CH 0.168 Ohm 17A 600 V MDmesh II PWR
Manufacturer
STMicroelectronics
Datasheet

Specifications of STF24NM60N

Lead Free Status / Rohs Status
 Details

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STF24NM60N, STP24NM60N
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 18047 Rev 1
I
I
V
(see Figure 17)
I
V
(see Figure 17)
SD
SD
SD
DD
DD
= 17 A, V
= 17 A, di/dt = 100 A/µs
= 17 A, di/dt = 100 A/µs
= 60 V
= 60 V T
Test conditions
J
GS
= 150 °C
= 0
Electrical characteristics
Min. Typ. Max Unit
-
-
-
-
340
404
4.6
5.7
27
28
1.6
17
68
µC
µC
ns
ns
5/15
A
A
V
A
A

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