STB11N52K3 STMicroelectronics, STB11N52K3 Datasheet - Page 8

• Manufacturer Part Number: STB11N52K3
• Description: MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
• Manufacturer: STMicroelectronics

Specifications of STB11N52K3

• Lead Free Status / Rohs Status: Details

Electrical characteristics
8/19
Figure 14. Source-drain diode forward
Figure 16. Maximum avalanche energy vs
E
V
AS
SD
(mJ)
0.7
180
100
(V)
0.8
0.4
0.3
0.2
160
140
0.9
0.6
0.5
0.1
120
20
80
60
40
0
0
0
0
characteristics
starting Tj
T
20
J
1
=-50°C
40
2
60
3
80
V
DD
I
D
=5 A
=50 V
T
4
100
J
=150°C
T
120 140
J
=25°C
5
Doc ID 018868 Rev 1
AM09123v1
I
AM09124v1
SD
T
(A)
J
(°C)
Figure 15. Normalized B
BV
(norm)
0.90
STB11N52K3, STF11N52K3, STP11N52K3
1.05
1.00
1.10
0.95
DSS
-75
-25
25
VDSS
75
vs temperature
125
AM09122v1
T
J
(°C)