2N3810 MICROSEMI, 2N3810 Datasheet - Page 3

• Manufacturer Part Number: 2N3810
• Manufacturer: MICROSEMI

Specifications of 2N3810

• Transistor Polarity: PNP
• Number Of Elements: 2
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 100
• Power Dissipation: 350mW
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 6
• Package Type: TO-78
• Lead Free Status / Rohs Status: Not Compliant

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
DYNAMIC CHARACTERISTICS (cont.)
Parameters / Test Conditions
Noise Figure
I
I
I
I
I
I
I
I
T4-LDS-0118 Rev. 1 (091095)
C
C
C
C
C
C
C
C
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
= 100μAdc, V
CE
CE
CE
CE
CE
CE
CE
CE
= 10Vdc, f = 100Hz, R
= 10Vdc, f = 1.0kHz, R
= 10Vdc, f = 10kHz, R
= 10Vdc, f = 10Hz to 15.7kHz, R
= 10Vdc, f = 100Hz, R
= 10Vdc, f = 1.0kHz, R
= 10Vdc, f = 10kHz, R
= 10Vdc, f = 10Hz to 15.7kHz, R
G
G
G
G
G
G
= 3.0kΩ
= 3.0kΩ
= 3.0kΩ
= 3.0kΩ
= 3.0kΩ
= 3.0kΩ
PNP SILICON DUAL TRANSISTOR
G
G
Qualified per MIL-PRF-19500 /336
= 3.0kΩ
= 3.0kΩ
2N3810, L, U
2N3810, L, U
2N3810, L, U
2N3810, L, U
2N3811, L, U
2N3811, L, U
2N3811, L, U
2N3811, L, U
TECHNICAL DATA SHEET
Symbol
F
F
F
F
F
F
F
F
1
2
3
4
1
2
3
4
Min.
Max.
7.0
3.0
2.5
3.5
4.0
1.5
2.0
2.5
Page 3 of 3
Unit
dB
dB