STM32F417IGH6 STMicroelectronics, STM32F417IGH6 Datasheet - Page 87

Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM

STM32F417IGH6

Manufacturer Part Number
STM32F417IGH6
Description
Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
Manufacturer
STMicroelectronics
Datasheets

Specifications of STM32F417IGH6

Core
ARM Cortex M4
Processor Series
STM32F4
Data Bus Width
32 bit
Maximum Clock Frequency
168 MHz
Program Memory Size
1024 KB
Data Ram Size
192 KB
On-chip Adc
Yes
Number Of Programmable I/os
140
Number Of Timers
10
Operating Supply Voltage
1.7 V to 3.6 V
Package / Case
UFBGA-176
Mounting Style
SMD/SMT
A/d Bit Size
12 bit
A/d Channels Available
24
Interface Type
CAN, I2C, I2S, SPI, UART
Program Memory Type
Flash
Lead Free Status / Rohs Status
 Details

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STM32F415xx, STM32F417xx
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 38.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
V
V
Symbol
FESD
EFTB
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 022063 Rev 1
38. They are based on the EMS levels and classes
DD
and V
SS
V
f
IEC 61000-4-2
V
f
IEC 61000-4-2
HCLK
HCLK
DD
DD
= 3.3 V, LQFP100, T
= 3.3 V, LQFP100, T
= 84 MHz, conforms to
= 84 MHz, conforms to
Conditions
Electrical characteristics
A
A
= +25 °C,
= +25 °C,
Level/
Class
87/156
2B
4A

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