JANTX2N5339 SEMICOA, JANTX2N5339 Datasheet - Page 2

• Manufacturer Part Number: JANTX2N5339
• Manufacturer: SEMICOA

Specifications of JANTX2N5339

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 60
• Power Dissipation: 1W
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-39
• Lead Free Status / Rohs Status: Not Compliant

Copyright 2002
Rev. E
Off Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
V
I
I
C
(BR)CEO
C
I
I
I
h
h
h
h
|h
CEX1
CEX2
BEsat1
BEsat2
CEsat1
CEsat2
CBO
CEO
EBO
OBO
FE1
FE2
FE3
FE4
t
t
t
t
IBO
FE
d
r
s
f
Semicoa Semiconductors, Inc.
|
www.SEMICOA.com
I
V
V
V
V
T
V
I
I
I
I
T
I
I
I
I
V
f = 10 MHz
V
100 kHZ < f < 1 MHz
V
100 kHZ < f < 1 MHz
I
I
C
C
C
C
C
C
C
C
C
C
C
A
A
CB
CE
CE
CE
EB
CE
CB
EB
= 50 mA
= 0.5 A, V
= 2 A, V
= 5 A, V
= 2 A, V
= 2 A, I
= 5 A, I
= 2 A, I
= 5 A, I
= 2 A, I
= 2 mA, I
= 150°C
= -55°C
= 100 Volts
= 90Volts, V
=90Volts, V
= 6 Volts
= 10 Volts, I
= 2 Volts, I
= 100 Volts
= 10 Volts, I
Test Conditions
Test Conditions
Test Conditions
B
B
B
B
B1
CE
CE
CE
= 200 mA
= 500 mA
= 200 mA
= 500 mA
B1
= 200 mA
CE
= 2 Volts
= 2 Volts
= 2 Volts
=I
= 2 Volts
C
B2
BE
C
E
BE
= 0 mA,
= 500 mA,
= 0 mA,
= 200 mA
= 1.5Volts,
= 1.5Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Min
Min
100
60
60
40
12
3
characteristics specified at T
Silicon NPN Transistor
Typ
Typ
Typ
2N5339
1,000
Max
Max
Max
100
100
240
250
100
100
200
1.2
1.8
0.7
1.2
10
10
10
15
D a t a S h e e t
2
Page 2 of 2
A
Units
Units
Units
Volts
Volts
Volts
= 25°C
mA
µA
µA
µA
µA
pF
pF
µs
ns
ns