SI3200-GS Silicon Laboratories Inc, SI3200-GS Datasheet - Page 13

• Manufacturer Part Number: SI3200-GS
• Description: IC LINEFEED INTRFC 100V 16SOIC
• Manufacturer: Silicon Laboratories Inc
• Series: ProSLIC®r

Specifications of SI3200-GS

• Function: Subscriber Line Interface Concept (SLIC), CODEC
• Interface: GCI, PCM, SPI
• Number Of Circuits: 2
• Voltage - Supply: 3.3V, 5V
• Current - Supply: 110µA
• Power (watts): 941mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Includes: Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Table 8. Si3200 Characteristics
(V
Table 7. Monitor ADC Characteristics
(V
Table 6. Linefeed Characteristics (Continued)
(V
Parameter
TIP/RING Pulldown Transistor Satura-
tion Voltage
TIP/RING Pullup Transistor
Saturation Voltage
Battery Switch Saturation
Impedance
Notes:
Parameter
Loop Voltage Sense Accuracy
Loop Current Sense Accuracy
Power Alarm Threshold Accuracy
Notes:
Parameter
Resolution
Differential Nonlinearity
Integral Nonlinearity
Gain Error
DD
DD
DD
1. V
2. I
1. Adaptive linefeed is enabled when the VOCDELTA RAM address is set to a non-zero value and is disabled when
2. R
3. Ringing amplitude is set for 93 V peak using the RINGAMP RAM address and measured at TIP-RING using no series
, V
, V
=
3.13 to 5.25 V, T
DD1
DD1
VOCDELTA is set to 0.
protection resistance.
OUT
AC
DC,MAX
–V
–V
=
= 60 mA
DD4
DD4
2.5 V
is the maximum dc resistance of the CPE; hence the specified total loop resistance is R
=
=
PK
3.13 to 5.25 V, T
3.13 to 5.25 V, T
, R
A
LOAD
=
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
=
Symbol
600 Ω.
DNL
INL
A
A
=
=
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Symbol
Symbol
R
V
V
SAT
CM
Test Condition
OV
I
(V
Rev. 1.0
LIM
Power Threshold = 300 mW
Accuracy of boundaries for
Accuracy of boundaries for
BAT
GND – V
V
V
GND – V
RING
= 22 mA, I
TIP
V
– V
each output code;
each output code;
I
Test Condition
TIP
ABIAS
Test Condition
I
I
I
I
– V
LIM
LIM
LIM
LOOP
– V
BATH
– V
RING
BAT
= 22 mA
= 45 mA
= 45 mA,
TIP
BAT
= 16 mA
RING
= 18 mA
)/I
ABIAS
(Reverse)
(Forward)
OUT
(Forward)
(Reverse)
= 48 V
–1.0
1
1
Min
= 4 mA
(Note 2)
—
—
—
1
1
Si3220/Si3225
±0.75
±0.6
±0.1
Min
Typ





8
Min
—
—
—
Typ
15
Typ
3
3
4
4
LOOP
±2
±7
—
±0.25
Max
+1.5
±1.5
—
+ R
Max

—

—

Max
±25
±10
±4
DC,MAX
Unit
LSB
LSB
LSB
LSB
Bits
Unit
Unit
.
Ω
%
%
%
V
V
V
V
13