A3P125-QNG132 MICROSEMI, A3P125-QNG132 Datasheet - Page 17

• Manufacturer Part Number: A3P125-QNG132
• Manufacturer: MICROSEMI

Specifications of A3P125-QNG132

• Lead Free Status / Rohs Status: Compliant

Maximum Power Allowed
Package Thermal Characteristics
The device junction-to-case thermal resistivity is θ
θ
temperature is 110°C.
allowed for a 484-pin FBGA package at commercial temperature and in still air.
Table 2-4 •
Temperature and Voltage Derating Factors
Table 2-5 •
Package Type
Very Thin Quad Flat Pack (VQFP)
Fine Pitch Ball Grid Array (FBGA)
*
Array Voltage VCC (V)
1.425
1.5
1.575
ja
. The thermal characteristics for θ
This information applies to all ProASIC3 devices except the A3P1000. Detailed device/package thermal
information will be available in future revisions of the datasheet.
Package Thermal Resistivities
Temperature and Voltage Derating Factors for Timing Delays
(normalized to T
=
Max. junction temp. (°C) Max. ambient temp. (°C)
-------------------------------------------------------------------------------------------------------------------------------------- -
EQ 2
–40°C
shows a sample calculation of the absolute maximum power dissipation
0.83
0.79
0.76
J
= 115°C, VCC = 1.425 V)
ja
θ
are shown for two air flow rates. The absolute maximum junction
ja
0.88
0.83
0.80
0°C
All devices
(°C/W)
See note*
See note*
See note*
A3P1000
A3P1000
A3P1000
Device
–
R e v i s i o n 1
25°C
0.90
0.85
0.82
jc
and the junction-to-ambient air thermal resistivity is
Count
100
144
256
484
144
256
484
Pin
70°C
0.95
0.90
0.87
10.0 35.3
3.8
3.8
3.2
6.3
6.6
8.0
θ
jc
Automotive ProASIC3 Flash Family FPGAs
85°C
0.97
0.92
0.88
=
26.9
26.6
20.5
31.6
28.1
23.3
Still
Air
110°C 70°C
------------------------------------
20.5°C/W
ft./min.
115°C
1.00
0.95
0.91
29.4
22.9
22.8
17.0
26.2
24.4
19.0
–
200
θ
ja
=
125°C
ft./min.
1.01
0.96
0.93
27.1
21.5
21.5
15.9
24.2
22.7
16.7
1.951 W
500
135°C
1.02
0.97
0.94
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
EQ 2
2 -5