SI3227-A-GQR Silicon Laboratories Inc, SI3227-A-GQR Datasheet - Page 9
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SI3227-A-GQR
Manufacturer Part Number
SI3227-A-GQR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI3227-A-GQR.pdf
(38 pages)
Specifications of SI3227-A-GQR
Lead Free Status / Rohs Status
Supplier Unconfirmed
Table 5. Linefeed Characteristics (Continued)
(V
Table 6. Monitor ADC Characteristics
(V
Table 7. Si3208/Si3209 Characteristics
(V
Loop Current
Sense Accuracy
Power Alarm
Threshold Accuracy
*Note: Ringing amplitude is set for 93 V peak and measured at TIP-RING using no series protection resistance.
Differential Nonlinearity
(8-bit resolution)
Integral Nonlinearity
(8-bit resolution)
Gain Error
TIP/RING Pull-down Transistor
Saturation Voltage
TIP/RING Pull-up Transistor
Saturation Voltage
OPEN State TIP/RING Leakage Current
DD
DD
DD
= 3.13 to 3.47 V, T
= 3.13 to 3.47 V, T
= 3.13 to 3.47 V, V
Parameter
Parameter
Parameter
A
A
BAT
= 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
= 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
= –15 to –130 V, T
Symbol
DNLE
INLE
Symbol
A
= 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Symbol
Power Threshold = 300 mW
Accuracy of boundaries for
V
I
V
Test Condition
LKG
Preliminary Rev. 0.33
CM
OV
each output code;
Test Condition
I
LOOP
GND – V
V
V
GND – V
= 18 mA
RING
TIP
Test Condition
V
V
– V
AC
AC
– V
I
I
I
I
OUT
OUT
OUT
OUT
R
RING
BAT
= 2.5 V
= 2.5 V
L
TIP
BAT
= 0Ω
= 22 mA
= 60 mA
= 22 mA
= 60 mA
(Reverse)
(Forward)
(Forward)
(Reverse)
PK
PK
Min
—
—
—
Min
—
—
Typ
—
—
—
Min
⎯
⎯
⎯
⎯
⎯
Typ
—
7
Typ
Si3208/9
⎯
⎯
⎯
3
3
Max
Max
1
1
5
10
25
Max
150
3.5
3.5
⎯
⎯
Unit
LSB
LSB
Unit
%
%
%
Unit
µA
V
V
V
V
9