BTA204X-1000C,127 NXP Semiconductors, BTA204X-1000C,127 Datasheet - Page 7
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BTA204X-1000C,127
Manufacturer Part Number
BTA204X-1000C,127
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BTA204X-1000C127.pdf
(14 pages)
Specifications of BTA204X-1000C,127
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
7. Characteristics
Table 7.
BTA204X-1000C
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on time
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
V
V
waveform; gate open circuit
V
dV
condition); gate open circuit
I
dI
T
TM
D
D
D
D
D
D
D
D
D
D
DM
D
G
= 5 A; T
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 1000 V; T
= 400 V; T
= 12 A; V
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 11
= 670 V; T
/dt = 20 V/µs; (without snubber
Rev. 1 — 16 June 2011
j
= 25 °C; see
T
T
T
G
G
G
T
j
T
D
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 25 °C; see
= 0.1 A; T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
= 0.1 A; T
= 125 °C; I
= 1000 V; I
j
j
= 125 °C
= 125 °C; exponential
j
= 25 °C;
Figure 10
j
= 125 °C
T(RMS)
G
Figure 9
= 0.1 A;
j
j
j
j
= 25 °C;
= 4 A;
j
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA204X-1000C
Min
2
2
2
-
-
-
-
-
-
0.25
-
1000
3
-
Typ
6
8
20
-
-
-
-
1.4
0.7
0.4
0.1
1500
30
2
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
35
35
35
20
30
20
20
1.7
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
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