VUM33-05 IXYS, VUM33-05 Datasheet - Page 4

• Manufacturer Part Number: VUM33-05
• Manufacturer: IXYS

Specifications of VUM33-05

• Lead Free Status / Rohs Status: Supplier Unconfirmed

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
V
P
I
Fig. 12 Peak reverse current versus
Fig. 15 Peak forward voltage versus
Fig. 18 Output power versus
RM
FR
out
40
30
20
10
18
16
14
12
10
kW
V
A
0
8
6
4
2
9
8
7
6
5
4
3
2
1
0
40
0
0
T
V
V
R
I
I
I
I
-di
-di
heatsink temperature (Module)
F
F
F
F
J
= 350 V
=100°C
100
100 200 300 400 500 600
V
= 37 A
= 74 A
= 37 A
= 18.5 A
F
F
in
/dt (Boost Diode)
/dt (Boost Diode)
= 115 V/60 Hz
60
200 300 400 500 600
-di
80
V
F
f
di
c
/dt
in
= 80 kHz
F
typ.
V
t
= 230 V/50 Hz
/dt
FR
FR
T
S
max.
100
A/μs
A/μs
°C
120
Z
thJC
P
Fig. 13 Dynamic parameters versus
Fig. 16 Output power versus carrier
Fig. 19 Transient thermal impedance junction to case for all devices
K
junction temperature (Boost Diode)
out
K/W
t
1.4
1.2
1.0
0.8
0.6
0.4
1.5
1.2
0.9
0.6
0.3
0.0
kW
12
10
8
6
4
2
0
0.01
20
0
VUM 33
T
S
frequency (Module)
=85°C
40
20
I
RM
60
40
Q
r
V
80 100 120 140 160
in
60
= 230 V/50 Hz
V
T
in
VJ
= 115 V/60 Hz
80
f
c
0.1
100 120
kHz
°C
Rectifier Diodes
P
t
rr
Fig. 14 Recovery time versus
Fig. 17 Output power versus
out
0.6
0.5
0.4
0.3
0.2
0.1
0.0
μs
kW
10
8
6
4
2
0
0
0
T
S
-di
=85°C
mains voltage
100
Boost Diode
50
F
T
V
max.
1
/dt (Boost Diode)
V
R
J
= 350 V
=100°C
200 300 400 500 600
VUM 33-05N
100
MOSFET
f
-di
c
t
V
= 40 kHz
I
I
I
I
typ.
F
in (RMS)
F
F
F
F
/dt
150
= 37 A
= 74 A
= 37 A
= 18.5 A
s
f
c
= 80 kHz
200
V
A/μs
20070704a
250
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