2N3507 MICROSEMI, 2N3507 Datasheet - Page 2

• Manufacturer Part Number: 2N3507
• Description: NPN TRANSISTOR, TO-5, LAW
• Manufacturer: MICROSEMI

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (T
Parameters / Test Conditions
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
Forward-Current Transfer Ratio
I
Forward-Current Transfer Ratio
I
Collector-Emitter Saturation Voltage
I
Collector-Emitter Saturation Voltage
I
Collector-Emitter Saturation Voltage
I
Base-Emitter Saturation Voltage
I
Base-Emitter Saturation Voltage
I
Base-Emitter Saturation Voltage
I
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
Output Capacitance
V
Input Capacitance
V
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions
Delay Time
I
Rinse Time
I
Storage Time
I
Fall Time
I
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.
T4-LDS-0016 Rev. 1 (072040)
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= 3.0Adc, V
= 500mAdc, V
= 500mAdc, V
= 500mAdc, I
= 1.5Adc, I
= 2.5Adc, I
= 500mAdc, I
= 1.5Adc, I
= 2.5Adc, I
= 100mAdc, V
= 1.5Adc, I
= 1.5Adc, I
= 1.5Adc, I
= 1.5Adc, I
= 3.0Vdc, I
= 10Vdc, I
B
B
B
B
B1
B1
B1
B1
CE
E
= 150mAdc
= 250mAdc
= 150mAdc
= 250mAdc
C
B
B
= 150mAdc
= 150mAdc
= I
= I
= 0, 100kHz ≤ f ≤ 1.0MHz
CE
CE
CE
= 5Vdc
= 0, 100kHz ≤ f ≤ 1.0MHz
= 50mAdc
= 50mAdc
B2
B2
= 1.0Vdc
= 2Vdc
= 5Vdc, f = 20MHz
= 150mAdc
= 150mAdc
(3)
NPN MEDIUM POWER SILICON TRANSISTOR
A
= +25°C, unless otherwise noted) (CONT.)
Qualified per MIL-PRF-19500/349
2N3506
2N3507
2N3506
2N3507
2N3506A
2N3507A
TECHNICAL DATA SHEET
Symbol
Symbol
Symbol
V
V
V
V
V
V
C
C
|h
h
h
h
CE(sat)
CE(sat)
CE(sat)
BE(sat)
BE(sat)
BE(sat)
obo
t
t
FE
FE
FE
ibo
t
t
fe
d
s
r
f
|
Min.
Min.
Min.
0.8
3.0
25
20
25
17
25
17
Max.
Max.
Max.
300
0.5
1.0
1.5
1.0
1.3
2.0
15
40
15
30
55
35
Page 2 of 2
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns