TS4975EIJT STMicroelectronics, TS4975EIJT Datasheet

IC AMP AUDIO .04W AB 12FLIPCHIP

TS4975EIJT

Manufacturer Part Number
TS4975EIJT
Description
IC AMP AUDIO .04W AB 12FLIPCHIP
Manufacturer
STMicroelectronics
Type
Class ABr
Datasheet

Specifications of TS4975EIJT

Output Type
Headphones, 2-Channel (Stereo)
Max Output Power X Channels @ Load
40mW x 2 @ 16 Ohm
Voltage - Supply
2.5 V ~ 5.5 V
Features
Depop, I²C, Standby, Thermal Protection, Volume Control
Mounting Type
Surface Mount
Package / Case
12-FlipChip
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5199-2
TS4975EIJT
Description
The TS4975 is a stereo audio headphone driver
capable of delivering up to 102mW per channel of
continuous average power into a 16
ended load with 1% THD+N from a 5V power
supply. The overall gain of these headphone
drivers is controlled digitally by volume control
registers programmed via the I
minimizing the number of external components
needed. This device can also easily be driven by
an MCU to select the output modes, through the
I
A phantom ground configuration allows one to
avoid using bulky capacitors on the outputs of the
headphone amplifiers.
The TS4975 is packaged in a 1.8mm X 2.3mm
Flip Chip package, ideally suited for space-
conscious portable applications.
It has also an internal thermal shutdown
protection mechanism.
Order Codes
November 2005
TS4975EIJT
2
C bus interface.
Operating from V
I²C bus control interface
40mW output power @ V
THD = 1%, F = 1kHz, with 16 load
Ultra-low consumption in stdby mode: 0.6µA
Digital volume control range from 18dB to
-34dB
14-step digital volume control
9 different output mode selections
Pop & click noise reduction circuitry
Flip-chip package, 12 x 300µm bumps (lead-
free)
Part Number
CC
= 2.5V to 5.5V
Temperature Range
CC
-40, +85°C
= 3.3V,
2
C interface,
single-
Stereo Headphone Drive Amplifier with
Digital Volume Control via I
Applications
Package
Flip-chip
Mobile phones (cellular / cordless)
PDAs
Laptop/notebook computers
Portable audio devices
BYPASS
BYPASS
OUT1
OUT1
IN1
IN1
Pin out (top view)
TS4975EIJT - Flip Chip
Tape & Reel
Packing
PHG1
PHG1
VCC
VCC
SCL
SCL
GND
GND
PHG2
PHG2
SDA
SDA
TS4975
OUT2
OUT2
ADD
ADD
IN2
IN2
Marking
2
A75
C Bus
www.st.com
Rev 3
1/36
36

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TS4975EIJT Summary of contents

Page 1

... C interface, Applications Mobile phones (cellular / cordless) PDAs Laptop/notebook computers Portable audio devices Package -40, +85°C Flip-chip TS4975 2 C Bus TS4975EIJT - Flip Chip Pin out (top view) OUT1 OUT1 PHG1 PHG1 PHG2 PHG2 OUT2 OUT2 IN1 IN1 VCC VCC GND ...

Page 2

Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Key parameters and their absolute maximum ratings Symbol V Supply voltage CC V Input Voltage i T Operating Free Air Temperature Range oper T Storage Temperature stg T Maximum Junction Temperature ...

Page 3

TS4975 2 Typical Application Schematics Typical application schematics for the TS4975 are show in Figure 2 configuration and in Figure 1. Single-ended configuration IN1 Cin1 A2 330nF IN2 Cin2 D2 330nF , for a phantom ground output configuration. Vcc Cb ...

Page 4

Typical Application Schematics Figure 2. Phantom ground output configuration IN1 Cin1 330nF IN2 Cin2 330nF 4/36 Vcc Cb Cs 1µF 1µF Bypass Bias IN1 Pre-Amplifier IN1 A2 Mode Select IN2 Pre-Amplifier IN2 D2 Volume control I2C ADD SCL SDA TS4975 ...

Page 5

TS4975 3 Electrical Characteristics Table 3. Electrical characteristics for the I²C interface Symbol V Maximum Low level Input Voltage on pins SDA, SCL, VADD IL V Minimum High Level Input Voltage on pins SDA, SCL, VADD IH F SCL Maximum ...

Page 6

Electrical Characteristics Table +2.5 V, GND = 0V Symbol Parameter I Supply Current CC I Standby Current STBY V Output Offset Voltage oo Output Power P out (per channel) Total Harmonic THD + N Distortion ...

Page 7

TS4975 Table +2.5 V, GND = 0V Symbol Parameter Crosstalk Channel Separation Signal to Noise Ratio SNR A-Weighted Output Noise Voltage, ONoise A-Weighted G Digital Gain Range Digital Gain Stepsize Gain Error Tolerance In1 & ...

Page 8

Electrical Characteristics Table +3.3V, GND = 0V Symbol Parameter I Supply Current CC I Standby Current STBY V Output Offset Voltage oo Output Power P out (per channel) Total Harmonic THD + N Distortion + ...

Page 9

TS4975 Table +3.3V, GND = 0V Symbol Parameter Crosstalk Channel Separation SNR Signal To Noise Ratio Output Noise Voltage, ONoise A-Weighted G Digital Gain Range Digital Gain Step size Gain Error Tolerance In1 & In2 ...

Page 10

Electrical Characteristics Table +5V, GND = 0V Symbol Parameter I Supply Current CC I Standby Current STBY V Output Offset Voltage oo Output Power P out (per channel) Total Harmonic THD + N Distortion + ...

Page 11

TS4975 Table +5V, GND = 0V Symbol Parameter Crosstalk Channel Separation Signal To Noise SNR Ratio, A-Weighted Output Noise ONoise Voltage, A-Weighted G Digital Gain Range Digital Gain Step size Gain Error Tolerance In1 & ...

Page 12

Electrical Characteristics Figure 3. THD+N vs. output power Out. mode Vcc=2.5V SE +2dB F=20kHz BW < 125kHz 1 Tamb = 25 C Vcc=2.5V F=1kHz 0.1 0.01 Vcc=3.3V Vcc=3.3V Vcc=5V F=1kHz F=20kHz ...

Page 13

TS4975 Figure 9. THD+N vs. output power Vcc=2.5V Out. mode F=20kHz PHG +2dB BW < 125kHz 1 Vcc=2.5V Tamb = 25 C F=1kHz 0.1 0.01 Vcc=3.3V Vcc=3.3V Vcc=5V F=1kHz F=20kHz F=20kHz ...

Page 14

Electrical Characteristics Figure 15. THD+N vs. frequency Output mode Single Ended G = +2dB BW < 125kHz 1 Tamb = 25 C Vcc=3.3V Vcc=2.5V P=40mW P=20mW 0.1 0.01 100 1000 Frequency (Hz) Figure ...

Page 15

TS4975 Figure 21. THD+N vs. frequency Output mode Phantom Ground G = +2dB BW < 125kHz 1 Tamb = 25 C Vcc=3.3V Vcc=2.5V P=40mW P=20mW 0.1 0.01 100 1000 Frequency (Hz) Figure 23. ...

Page 16

Electrical Characteristics Figure 27. Output power vs. power supply voltage (each channel) 180 F = 1kHz 160 Output mode Single Ended 140 BW < 125 kHz Tamb = 25 C 120 16 100 ...

Page 17

TS4975 Figure 31. PSSR vs. frequency 0 Vcc = 2.5V - -20 Output mode SE, Inp. grounded -30 Vripple = 200mVpp -40 G=+10dB G=+2dB -50 -60 -70 -80 G=-10dB -90 G=-2dB -100 20 100 1000 ...

Page 18

Electrical Characteristics Figure 37. Crosstalk vs. frequency 0 Vcc = 2.5V Output mode 1 -20 Single Ended G = +2dB Tamb = 25 C -40 -60 RL=32 Po=10mW -80 -100 -120 100 1000 Frequency (Hz) Figure 39. Crosstalk vs. frequency ...

Page 19

TS4975 Figure 43. SNR vs. power supply voltage 110 108 106 104 Out. mode 102 SE +2dB 100 Unweighted filter (20Hz to 20kHz) 98 THD+N < 0.5% 96 Tamb ...

Page 20

Electrical Characteristics Figure 49. SNR vs. power supply voltage 110 108 106 104 102 Out. mode 100 PHG +18dB 98 96 Unweighted filter (20Hz to 20kHz) 94 THD+N < ...

Page 21

TS4975 Figure 55. Power dissipation vs. output power (one channel 70 Vcc = 2. 1kHz 60 THD+N < Output Power (mW) Figure 57. Power dissipation vs. output power ...

Page 22

Application Information 4 Application Information The TS4975 integrates 2 monolithic power amplifiers. The amplifier output can be configured as either SE (single-ended) capacitively-coupled output or PHG (phantom ground) output. Figure 1 on page 3 and Section 4.2: Output configuration This ...

Page 23

TS4975 All bytes are sent with MSB bit first. The transfer of written data ends with a “stop” message. When transmitting several data, the data can be written with no need to repeat the “start” message and addressing byte with ...

Page 24

Application Information 4.1.2 Gain setting operation The gain of the TS4975 ranges from -34dB to +18 dB. At Power-up, both the right and left channels are set in Standby mode. Table 11. Gain settings truth table G: Gain (dB) # ...

Page 25

TS4975 Table 14. I²C control byte states D7 D6 (MSB 4.1.3 Acknowledge The number of data bytes transferred between the start and the stop conditions from the CPU master to the TS4975 slave is not limited. Each byte ...

Page 26

Application Information 4.3 Power dissipation and efficiency Hypotheses: Voltage and current in the load are sinusoidal (V Supply voltage is a pure DC source (V Regarding the load we have: and and Single-ended configuration: The average current delivered by the ...

Page 27

TS4975 and its value is: Note: This maximum value depends only on power supply voltage and load values. The efficiency is the ratio between the output power and the power supply: The maximum theoretical value is reached when V Phantom ...

Page 28

Application Information The efficiency is the ratio between the output power and the power supply: The maximum theoretical value is reached when V The TS4975 is a stereo amplifier so it has two independent power amplifiers. Each amplifier produces heat ...

Page 29

TS4975 Output capacitor C In single-ended mode the external output coupling capacitors C capacitor C with the output load RL also forms a first-order high-pass filter with -3 dB cut off out frequency. See Figure 54 to establish the C ...

Page 30

Application Information 4.7 Notes on PSRR measurement What is PSRR? The PSRR is the Power Supply Rejection Ratio. The PSRR of a device is the ratio between a power supply disturbance and the result on the output. In other words, ...

Page 31

TS4975 4.8 Startup time When the TS4975 is controlled to switch from full standby (output mode 0) to another output mode, a delay is necessary to stabilize the DC bias.This length of this delay depends on the C and V ...

Page 32

Application Information 4.10 Thermo shutdown The TS4975 device has internal protection in case of over temperature by thermal shutdown. Thermal shutdown is active when the device reaches temperature 150°C. When thermo shutdown protection is active, value $Fxh (1111xxxx binary) can ...

Page 33

TS4975 Figure 67. Demoboard schematic P1 C10 IN1 IN1 1 + 330nF P2 C11 IN2 IN2 6 + 330nF I2C BUS SDA Vcc1 R8 180R U2A 1 CON1 KP1040 2 7 TXD 3 8 DTR 4 9 ...

Page 34

Package Mechanical Data 5 Package Mechanical Data Figure 68. TS4975 footprint recommendation =250 m =250 m =400 m typ. =400 m typ. =340 m min. =340 m min. Non Solder mask opening Non Solder mask opening Figure 69. Pin out ...

Page 35

TS4975 Figure 71. Flip-chip - 12 bumps 2300µm 2300µm 500µm 500µm 500µm 500µm Figure 72. Tape & reel specification (top view Die size: 2.3mm x 1.8mm ± 30µm Die height (including bumps): 600µm Bumps diameter: 315µm ±50µm 1800µm ...

Page 36

... STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. ...

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