MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 42

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Timing Diagrams
Figure 34:
Figure 35:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
COMMAND LATCH Cycle
ADDRESS LATCH Cycle
Note:
Note:
WE#
WE#
I/Ox
ALE
I/Ox
ALE
CE#
CLE
CE#
CLE
x16: I/O[15:8] must be set to “0.
x16: I/O [15:8] must be set to “0.”
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
t WP
42
t
t CS
WP
t CLS
t ALS
t DS
t
Address
CS
COMMAND
t
t
Don‘t Care
ALS
t
CLS
DS
t WC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t ALH
t DH
t
t
t
t
CLH
ALH
CH
DH
t WH
Undefined
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don‘t Care