2N3501JANTX MICROSEMI, 2N3501JANTX Datasheet - Page 3

• Manufacturer Part Number: 2N3501JANTX
• Manufacturer: MICROSEMI

Specifications of 2N3501JANTX

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 150V
• Collector-base Voltage: 150V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 300mA
• Dc Current Gain (min): 100
• Power Dissipation: 1W
• Operating Temp Range: -55C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-39
• Lead Free Status / Rohs Status: Not Compliant

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
Turn-Off Time
I
SAFE OPERATING AREA
DC Tests
T
Test 1
V
V
V
Test 2
V
V
Test 3
V
V
Clamped Switching
T
Test 1
I
I
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0056 Rev. 1 (080812)
C
B
B
C
A
EB
CE
CE
CE
CE
CE
CE
CE
= 150mAdc; I
= 85mAdc, I
= 50mAdc, I
= +25°C, t
= +25°C
= 5Vdc; I
= 10Vdc, I
= 16.67Vdc, I
= 10Vdc, I
= 50Vdc, I
= 50Vdc, I
= 80Vdc, I
= 80Vdc, I
r
C
≥ 10ηs; 1 Cycle, t = 1.0s
C
C
C
C
C
C
C
C
= 150mAdc; I
B1
= 500mAdc
= 113mAdc
= 100mAdc
= 23mAdc
= 40mAdc
= 14mAdc
= 500mAdc
= 300mAdc
C
= I
= 300mAdc
B2
= 15mAdc
B1
= 15mAdc
NPN SILICON SWITCHING TRANSISTOR
RADIATION HARDENED
2N3498, 2N3499
2N3500, 2N3501
2N3501UB
All Types
2N3501UB
All Types
2N3501UB
2N3498, 2N3499
2N3500, 2N3501
Qualified per MIL-PRF-19500/366
TECHNICAL DATA SHEET
Symbol
t
t
off
on
Min.
Max.
1150
115
Page 3 of 3
Unit
ηs
ηs