2MBI200UB-120 Fuji Electric holdings CO.,Ltd, 2MBI200UB-120 Datasheet
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2MBI200UB-120
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2MBI200UB-120 Summary of contents
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... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...
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... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 T j=25°C 400 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25° ...
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... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C 10000 1000 100 10 0 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 10000 1000 tr 100 10 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=± ...
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... Forward current vs. Forward on voltage (typ.) 500 Tj=25°C 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M233 chip 1000 Tj=125°C 100 FWD IGBT 0.100 1.000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=± ...