MIG75J201H TOSHIBA Semiconductor CORPORATION, MIG75J201H Datasheet
MIG75J201H
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MIG75J201H Summary of contents
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... Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : V CE (sat) t off = 3.0 µs (Max 0.30 µs (Max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit MIG75J201H = 2.5 V (Max) 1 MIG75J201H 2001-05-29 ...
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... FO sink current minute M5 = 25°C ) Symbol Test Condition T = 25° 600V CEX 125° 25° (sat 125° 75A 300 off Inductive load MIG75J201H Symbol Ratings Unit V 450 600 V CES 195 150 ° 450 600 V CES 600 150 ° ...
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... (off 125° 125° Case temperature OTr UV UVr MIG75J201H Min Typ. Max Unit 1 1.7 2.7 V 1.6 1 2.0 2.5 V 0.9 2.0 1.7 3.0 µs 0.25 0.5 ...
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... Case to fin thermal R resistance Note 1: Switching time test circuit & timing chart Test Condition Inverter IGBT stage Inverter FRD stage th (j-c) Brake IGBT stage Brake FRD stage Compound is applied th (c-f) 4 MIG75J201H Min Typ. Max Unit 0.553 1.000 ° 1.562 ...
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... MIG75J201H 2001-05-29 ...
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... MIG75J201H 2001-05-29 ...
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... Package Dimensions: TOSHIBA 2-110A1A 7 MIG75J201H Unit: mm 2001-05-29 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MIG75J201H 000707EAA 2001-05-29 ...