7MBR50SB120 Fuji Electric holdings CO.,Ltd, 7MBR50SB120 Datasheet

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7MBR50SB120

Manufacturer Part Number
7MBR50SB120
Description
IGBT(1200V/50A/PIM)
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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7MBR50SB120
IGBT MODULE (S series)
1200V / 50A / PIM
· Low V
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Item
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage
Mounting screw torque
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
Absolute maximum ratings (Tc=25°C unless without specified)
should be connected together and shorted to copper base.
Features
Applications
Maximum ratings and characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t
CE
between thermistor and others *3
(sat)
(Non-Repetitive)
Symbol
V
V
I
I
-I
P
V
V
I
I
P
V
V
I
I
I
T
T
V
C
CP
C
CP
O
FSM
2
C
j
stg
CES
GES
C
CES
GES
C
RRM
RRM
t
iso
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Tc=80°C
Tc=80°C
Tc=80°C
Tc=25°C
Tc=25°C
Tc=25°C
Tc=25°C
Tc=80°C
Rat ing
-40 to +125
AC 2500
AC 2500
1200
1200
1200
1600
1352
+150
±20
150
100
360
±20
180
520
75
50
50
35
25
70
50
50
3.5 *
1
IGBT Modules
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
°C
°C
V
N·m
2
s

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7MBR50SB120 Summary of contents

Page 1

... IGBT MODULE (S series) 1200V / 50A / PIM Features · Low V (sat) CE · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... B T=25/50°C Symbol Condition Inverter IGBT Inverter FWD Rth(j-c) Brake IGBT Converter Diode With thermal compound Rth(c- 21( 23( 7MBR50SB120 Characteristics Min. Typ. =0V GE =±20V 5.5 7.2 =50mA 2.1 2.3 terminal 6000 =10V, f=1MHz 0.35 0.25 0.1 0.45 0.08 2.3 chip 2.5 ...

Page 3

... 1000 800 Cies 600 400 Coes Cres 200 7MBR50SB120 [ Inverter ] Collector current vs. Collector-Emitter voltage o Tj= 125 C (typ.) 15V VGE= 20V Collector - Emitter voltage : VCE [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj (typ.) Ic= 100A Ic= 50A Ic= 25A Gate - Emitter voltage : VGE [ Inverter ] Dynamic Gate charge (typ.) ...

Page 4

... Tj=125°C 120 100 Eon Eoff 20 Err 0 100 500 ] 7MBR50SB120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, V =±15V, Rg=24 , Tj=125°C GE toff ton Collector current : Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, V =±15V, Rg=24 GE Eon(125 Eon(25 Eoff(125 Eoff(25 ...

Page 5

... Pulse width : Pw [ sec ] 300 o o Tj=125 C Tj=25 C 100 Tj Tj= 125 C 1.2 1.6 2.0 200 100 FWD[Inverter] IGBT[Brake] Conv. Diode 10 IGBT[Inverter] 1 0.1 0.1 1 7MBR50SB120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, V =±15V, Rg= trr(125 C) o trr( Irr(125 C) o Irr( Forward current : Thermistor ] Temperature characteristic (typ.) -60 -40 - ...

Page 6

... 1000 800 Cies 600 400 200 Coes Cres 7MBR50SB120 [ Brake ] Collector current vs. Collector-Emitter voltage o Tj= 125 C (typ.) 15V VGE= 20V Collector - Emitter voltage : VCE [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj (typ.) Ic= 50A Ic= 25A Ic= 12. Gate - Emitter voltage : VGE [ Brake ] Dynamic Gate charge (typ.) ...

Page 7

... M712 1 122 0.3 110 0.3 94.5 15.24 19.05 19.05 15. 3.81 0.3 99.6 3. 15.24 15.24 15.24 15.24 0.2 1.15 ø0.4 7MBR50SB120 +0.5 3.81 4=15.24 11 15.24 22.86 0.1 ø2.5 0.1 ø2.1 Section A-A Shows theory dimensions ...

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