Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
FEATURES
* High thermal fatigue durability.
* low noise due to built-in free-wheeling
*High speed,low loss IGBT module.
*Low driving power due to low input
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(3) R
diode - ultra soft fast recovery diode(USFD).
capacitance MOS gate.
IGBT MODULE
(delta Tc=70°C,N>20,000cycles)
MBN1200D33A
(4) Counter arm IGBT V
Item
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
(M4/M8)
(M6)
GE
1ms
1ms
DC
DC
°C
=-15V
)
G
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
CE(sat)
C
V
GES
t
t
CES
V
V
t
V
t
on
t
off
FM
T
ies
rr
r
I
Pc
f
I
°C
CES
GES
I
I
FM
T
Cp
ISO
stg
-
-
C
F
j
)
°C/W
Unit
mA
(2)Recommended Value 5.5±0.5N.m
nA
nF
ms
ms
V
V
V
OUTLINE DRAWING
Weight: 1,200 (g)
Unit
V
N.m
°C
°C
W
Min.
V
RMS
V
A
A
4.0
-
-
-
-
-
-
-
-
-
-
-
-
3-M4
8- 7
6-M8
Typ.
150
4.1
5.5
1.6
2.3
3.9
2.8
0.8
2.4
-
-
-
-
0.008
0.016
Max.
±500 V
12.0 V
5.0
7.0
2.6
3.2
3.2
5.6
3.7
1.4
-
C
G
E
TERMINALS
I
V
V
V
L=100nH
R
V
-Ic=1,200A,V
Vcc=1,650V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
C
CE
GE
CE
CE
CC
G
GE
=1,200A,V
C
E
=3.3W
5,400(AC 1 minute)
=3,300V,V
=10V, I
=10V,V
=±20V,V
=1,650V,Ic=1,200A
=±15V Tc=125°C
MBN1200D33A
C
E
-40 ~ +125
-40 ~ +125
12,000
3,300
1,200
2,400
2,400
Test Conditions
C
1,200
GE
Junction to case
±20
GE
CE
(3)
=1,200mA
C
E
2/10
=0V,f=100KHz
GE
GE
=0V
=15V
=0V
=0V
6
PDE-N1200D33A-0
(1)
(2)
Unit in mm