TE53N50E Motorola, TE53N50E Datasheet
TE53N50E
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TE53N50E Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 Data Sheet . Rating 10 ms Order this document by MTE53N50E/D MTE53N50E Motorola Preferred Device TMOS POWER FET 53 AMPERES 500 VOLTS R DS(on) = 0.080 OHM SOT– ...
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... MTE53N50E ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 500 Vdc Vdc 500 Vdc Vdc 125 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ( 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain– ...
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... DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current and Gate Voltage 100000 125 C 10000 100 C 1000 100 100 200 300 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage MTE53N50E – 100 120 400 500 3 ...
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... MTE53N50E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... The energy rating decreases non–linearly with an in- crease of peak current in avalanche and peak junction temperature 0.5 0.6 0.7 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current MTE53N50E 250 d(off d(on GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.9 1 1.1 ...
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... MTE53N50E 1000 SINGLE PULSE 100 10 1 0.1 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) www.DataSheet4U.com Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.0001 1.0E–05 6 SAFE OPERATING AREA 100 DS(on) LIMIT ...
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... Maximum screw torque: 1.5 Nm Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS " 0.2 Nm SOT–227B MTE53N50E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 CONTROLLING DIMENSION: MILLIMETERS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 31.50 31.70 1.240 1.248 B 7.80 8 ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MTE53N50E/D* Motorola TMOS Power MOSFET Transistor Device Data MTE53N50E/D ...