BYG50G Philips Semiconductors, BYG50G Datasheet
BYG50G
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BYG50G Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 ...
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... SYMBOL PARAMETER V repetitive peak reverse voltage RRM BYG50D BYG50G BYG50J BYG50K BYG50M V continuous reverse voltage R BYG50D BYG50G BYG50J BYG50K BYG50M I average forward current F(AV) I non-repetitive peak forward current FSM 1996 May 24 DESCRIPTION DO-214AC; SOD106 surface mountable package with glass passivated chip. ...
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... ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V forward voltage F V reverse avalanche (BR)R breakdown voltage BYG50D BYG50G BYG50J BYG50K BYG50M I reverse current R t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient ...
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... Philips Semiconductors Controlled avalanche rectifiers GRAPHICAL DATA 4 handbook, halfpage I F(AV 1.57. R RRMmax Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 200 handbook, halfpage 160 120 400 Device mounted as shown in Fig.7. Solid line PCB. ...
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... Philips Semiconductors Controlled avalanche rectifiers 3 10 handbook, halfpage RMMmax Fig.6 Reverse current as a function of junction temperature; maximum values. handbook, full pagewidth DUT + Input impedance oscilloscope pF; t Source impedance ns. r Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 May 24 ...
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... Philips Semiconductors Controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth 2.3 2.0 0.05 2.8 1.6 2.4 1.4 Dimensions in mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data ...